W29NK50Z

N-CHANNEL SuperMESH MOSFET

STMicroelectronics

W29NK50Z Features

* TYPE STW29NK50Z I I I I I I Figure 1: Package ID 31 A PW 350 W VDSS 500 V RDS(on) < 0.13 Ω TYPICAL RDS(on) = 0.105 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-247 3 2 1 www.DataSheet4U.co

W29NK50Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements .

W29NK50Z Datasheet (551.07 KB)

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W29NK50Z

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STMicroelectronics ↗

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N-channel supermesh mosfet.

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W29NK50Z N-CHANNEL SuperMESH MOSFET STMicroelectronics

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