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W8NC90Z Datasheet - STMicroelectronics

STW8NC90Z

W8NC90Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo

W8NC90Z General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large varie.

W8NC90Z Datasheet (250.23 KB)

Preview of W8NC90Z PDF

Datasheet Details

Part number:

W8NC90Z

Manufacturer:

STMicroelectronics ↗

File Size:

250.23 KB

Description:

Stw8nc90z.
STW8NC90Z N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE VDSS RDS(on) ID STW8NC90Z 900 V < 1.38 Ω 7.6 A s TYPIC.

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