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W8NC90Z STW8NC90Z

W8NC90Z Description

STW8NC90Z N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE VDSS RDS(on) ID STW8NC90Z 900 V < 1.38 Ω 7.6 A s TYPIC.
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-b.

W8NC90Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo

W8NC90Z Applications

* APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT TO-247 ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuos) at TC = 25°

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