Y60NK30Z Datasheet - STMicroelectronics

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Y60NK30Z STY60NK30Z

STY60NK30Z N-CHANNEL 300V - 0.033Ω - 60A Max247 Zener-Protected SuperMESH™Power MOSFET TYPE STY60NK30Z s s s s s s VDSS 300 V RDS(on) < 0.045 Ω ID .
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

Y60NK30Z-STMicroelectronics.pdf

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Datasheet Details

Part number:

Y60NK30Z

Manufacturer:

STMicroelectronics ↗

File Size:

210.89 KB

Description:

STY60NK30Z

Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

Applications

* Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH EFFICIENCY SWITCHING DC/DC CONVETERS FOR PLASMA TV’s s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SAL

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