FLM3135-4F Datasheet, Fet, SUMITOMO

FLM3135-4F Features

• Fet
• High Output Power: P1dB = 36.5dBm (Typ.)
• High Gain: G1dB = 12.0dB (Typ.)
• High PAE: ηadd = 38% (Typ.)
• Low IM3 = -45dBc@Po = 25.5dBm
• Broa

PDF File Details

Part number:

FLM3135-4F

Manufacturer:

SUMITOMO

File Size:

438.98kb

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📄 Datasheet

Description:

C-band internally matched fet. The FLM3135-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a

TAGS

FLM3135-4F

SUMITOMO

📁 Related Datasheet

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FLM3135-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 12.0dB (Typ.) High PAE: ηad.

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FLM3135-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 11.5dB (Typ.) High PAE: ηa.

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FLM3135-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm (Typ.) High Gain: G1dB = 11.0dB (Typ.) High PAE: ηad.

FLM3135-8F - C-Band Internally Matched FET (SUMITOMO)
FLM3135-8F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 39.5dBm (Typ.) • High Gain: G1dB = 11.0dB (Typ.) • High PAE: hadd = 37% .

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FLM3439-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 11.5dB (Typ.) High PAE: ηa.

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FLM3439-4F - C-Band Internally Matched FET (SUMITOMO)
FLM3439-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 12.0dB (Typ.) High PAE: ηad.