XLZE32W
SUN LED
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T-1 (3mm) solid state lamp.
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XL001WP01UVC380 - 1W UV POWER LED
(SEALAND)
NO：XL001WP01UVC380 SHENZHEN SEALAND OPTO ELECTRONICS CO.,LTD 1W UV POWER LED
Specification for Approval
l Feature
Ø Chip material : InGaAlN.
XL0840 - SENSITIVE GATE 0.8A SCRs
(STMicroelectronics)
®
XL0840
SENSITIVE GATE 0.8A SCRs
A
MAIN FEATURES Symbol IT(RMS) VDRM IGT Value 0.8 400 200 Unit A V
K G
µA
DESCRIPTION Thanks to its highly sens.
XL0840 - SCRs
(HAOPIN)
TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
XL0840
SCRs
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use .
XL1000 - 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier
(Mimix Broadband)
..
20.0-40.0 GHz GaAs MMIC Low Noise Amplifier
April 2005 - Rev 01-Apr-05
L1000 Chip Device Layout
Features
Self Bias Architecture.
XL1000-BD - Low Noise Amplifier
(MA-COM)
XL1000-BD
Low Noise Amplifier 20 - 40 GHz
Features
Self Bias Architecture Small Size 3 or 5 V Operation 20 dB Small Signal Gain 2 dB Noise F.
XL1001 - 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier
(Mimix Broadband)
..
17.0-35.0 GHz GaAs MMIC Low Noise Amplifier
March 2005 - Rev 01-Mar-05
L1001 Chip Device Layout
Features
Balanced Design Excell.
XL1002 - 20.0-36.0 GHz GaAs MMIC Low Noise Amplifier
(Mimix Broadband)
..
20.0-36.0 GHz GaAs MMIC Low Noise Amplifier
March 2005 - Rev 01-Mar-05
L1002 Chip Device Layout
Features
Balanced Design Excell.
XL1002-BD - Low Noise Amplifier
(MA-COM)
XL1002-BD
Low Noise Amplifier 20.0-36.0 GHz
Features
Balanced Design Excellent Input/Output Match Self-biased Architecture 23.0 dB Small Signa.
XL1003 - 24.0-40.0 GHz GaAs MMIC Low Noise Amplifier
(Mimix Broadband)
..
24.0-40.0 GHz GaAs MMIC Low Noise Amplifier
May 2006 - Rev 10-May-06
L1003 Chip Device Layout
Features
Balanced Output Stage Ex.
XL1004 - 35.0-45.0 GHz GaAs MMIC Low Noise Amplifier
(Mimix Broadband)
..
35.0-45.0 GHz GaAs MMIC Low Noise Amplifier
May 2006 - Rev 10-May-06
L1004 Chip Device Layout
Features
Balanced Design Excellen.
