SSF65R190S2 Datasheet - SUPER-SEMI

SSF65R190S2 650V N-Channel Super-Junction MOSFET

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withs.

SSF65R190S2 Features

* Multi-Epi process SJ-FET

* 700V @TJ = 150 ℃

* Typ. RDS(on) = 0.16Ω

* Ultra Low Gate Charge (typ. Qg = 36.5nC)

* 100% avalanche tested SSF65R190S2 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS Drain-Source Voltage Drain Current -Continuous

SSF65R190S2 Datasheet (704.19 KB)