SSF65R190S2

650V N-Channel Super-Junction MOSFET

SSF65R190S2 Features

* Multi-Epi process SJ-FET

* 700V @TJ = 150 ℃

* Typ. RDS(on) = 0.16Ω

* Ultra Low Gate Charge (typ. Qg = 36.5nC)

* 100% avalanche tested SSF65R190S2 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS Drain-Source Voltage Drain Current -Continuous

SSF65R190S2 General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withs.

SSF65R190S2 Datasheet (704.19 KB)

SSF65R190S2 Datasheet Preview — Preview of SSF65R190S2 PDF

Datasheet Details

Part number:

SSF65R190S2

Manufacturer:

SUPER-SEMI

File Size:

704.19 KB

Description:

650v n-channel super-junction mosfet.
SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS
*65R190S2 Rev. 1.

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SSF65R190S2 650V N-Channel Super-Junction MOSFET SUPER-SEMI

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SSF65R190S2 Features

SSF65R190S2 General Description

Datasheet Details

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Description:

SSF65R190S2 Distributor