www.DataSheet4U.com S DP /B 55N02 S amHop Microelectronics C orp.
May,2004 ver1.1 N-Channel E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S Max ID 32A R DS (on) ( m W ) S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & TO-263 package.
19 @ V G S = 4.5V D D G D S G S G S DP S E R IE S TO-220 S DB S E R IE S TO-263(DD-P AK) S ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise n
