Part number:
SP3900
Manufacturer:
SamHop Microelectronics
File Size:
107.67 KB
Description:
Dual n-channel enhancement mode field effect transistor.
Datasheet Details
SP3900 Features
* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D1 D1 D2 D2 DFN 3x3 PIN1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Co
Datasheet Details
SP3900
SamHop Microelectronics
107.67 KB
Dual n-channel enhancement mode field effect transistor.
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