STD9916L - N-Channel Enhancement Mode Field Effect Transistor

SamHop Microelectronics

Datasheet Details

Part number	STD9916L
Manufacturer	SamHop Microelectronics
File Size	860.67 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	STD9916L_SamHopMicroelectronics.pdf

( m £[ ) Max ID 25A RDS(ON) Super high dense cell design for low RDS(ON). 30@ VGS = 10V 40@ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G SDU SERIES TO-252AA(D-PAK) SDD SERIES TO-251(l-PAK) S.

📁 STD9916L Similar Datasheet

STD901T - High voltage NPN Darlington transistor (STMicroelectronics)
STD90N02L - N-CHANNEL MOSFET (ST Microelectronics)
STD90N02L-1 - N-CHANNEL MOSFET (ST Microelectronics)
STD90N03L - N-Channel Power MOSFET (ST Microelectronics)
STD90N03L-1 - N-Channel Power MOSFET (ST Microelectronics)
STD90N4F3 - N-channel Power MOSFET (STMicroelectronics)
STD90NH02L - N-CHANNEL POWER MOSFET (ST Microelectronics)
STD93003 - HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR (ST Microelectronics)

Other Datasheets by SamHop Microelectronics

Published: Nov 14, 2006 |