* Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. 1.54 0.03 WLCSP TOP VIEW 1.54 0.03 8200 Date Code BOTTOM VIEW 0.65 G2 S2 G1 S1 0.65 1-pin index mark S1 Mark area 0.210 0.010 0.107 0.007 4 - φ 0.31 S1: Source 1 G1: Gate 1 G2: Gate 2 S2:
SC8200
SamHop
94.17 KB
Dual n-channel enhancement mode field effect transistor.
Green Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SC8200
Ver 3.0
PRODUCT SUMMARY
VSSS
IS RSS(O.
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