* Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW BOTTOM VIEW 1.77 4x 0.25 0.03 3.54 8612 Date Code 1.25 0.03 43 52 61 Mark area 1-pin index mark S1 3 2x φ 0.25 0.03 2 1 0.16 0.01 4 5 6 0.25 0.5 ABSOLUTE MAXIMUM RATINGS (TA
SC8612
SamHop
90.64 KB
Dual n-channel enhancement mode field effect transistor.
Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SC8612 Preliminary PRODUCT SUMMARY VSSS IS R.
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