K9KAG08U1M - FLASH MEMORY

Product Overview

Samsung Electronics

Part number	K9KAG08U1M
Manufacturer	Samsung Electronics
File Size	1.37 MB
Description	FLASH MEMORY
Datasheet	K9KAG08U1M Datasheet
Additional preview pages of the K9KAG08U1M datasheet.

Offered in 1Gx8bit, the K9F8G08X0M is a 8G-bit NAND Flash Memory with spare 256M-bit.

Voltage Supply - 2.7V Device(K9F8G08B0M) : 2.5V ~ 2.9V - 3.3V Device(K9F8G08U0M) : 2.7V ~ 3.6V.
Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (4K + 128) x 8bit.
Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (256K + 8K)Byte.
Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase.

📁 Similar Datasheet

K9KAG08U0M - FLASH MEMORY (Samsung)
K9K1208D0C - 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory (Samsung semiconductor)
K9K1208Q0C - 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory (Samsung semiconductor)
K9K1208U0A-YCB0 - 64M x 8 Bit NAND Flash Memory (Samsung semiconductor)
K9K1208U0A-YIB0 - 64M x 8 Bit NAND Flash Memory (Samsung semiconductor)
K9K1208U0C - 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory (Samsung semiconductor)
K9K1208U0M - 64M x 8 Bit NAND Flash Memory (Samsung semiconductor)
K9K1208U0M-YCB0 - 64M x 8 Bit NAND Flash Memory (Samsung semiconductor)

Other Datasheets by Samsung Electronics

Published: Sep 13, 2010 |