KMM466S823DT3 Datasheet - Samsung Semiconductor

KMM466S823DT3 PC66 SODIMM

The Samsung KMM466S823DT3 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM466S823DT3 consists of eight CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass-epoxy www.DataSheet4U.com subst.

KMM466S823DT3 Revision History Revision 0.0 (July 5, 1999) PC66 SODIMM Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. Skip ICC4 value of CL=2 in DC characteristics in datasheet. Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER. Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE. Symbol Change Notice www.DataSheet4U.com IIL IIL IOL Before Input leakage current (inputs) Input leaka.

KMM466S823DT3 Features

* arge standby current in non power-down mode ICC1 ICC2P ICC2PS ICC2N ICC2NS

KMM466S823DT3_SamsungSemiconductor.pdf