KMMR18R8GC, KMMR16R84C Datasheet - Samsung Semiconductor

KMMR18R8GC (KMMR16R8xC / KMMR18R8xC) SDRAM

Signal Gnd Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78, A80, A82, A84, A86, A88, A90, A92, B1, B3, B5, B7, B9, B11, B13, B15, B17, B19, B21, B23, B25, B27, B29, B31, B33, B39, B52, B60, B62, B64, B66,.

www.DataSheet4U.com KMMR16R84(6/8/C/G)C KMMR18R84(6/8/C/G)C Overview 4/6/8/12/16d 4/6/8/12/16d RIMMTM RIMMTM Preliminary Module with 128Mb RDRAMs Module with 144Mb RDRAMs Key Timing Parameters/Part Numbers The following table lists the frequency and latency bins available from RIMM modules. An optional ‘ S’ designator instead of ‘R’ followed by ‘ hyphen(-)’ indicates low power modules. TABLE 1. Part Number by Freq. & Latency Speed Organization I/O Binning Freq. MHz -RG6 -RK8 -RM8 48M x 16/1.

KMMR18R8GC Features

* High speed 800 and 600MHz RDRAM storage

* 184 edge connector pads with 1mm pad spacing

* Maximum module PCB size : 133.5mm x 34.93mm x 96M x 16/18 -RG6 -RK8 -RM8 128M x 16/18 -RG6 -RK8 -RM8 1.37mm (5.21” x 1.375” x 0.05”)

* Each RDRAM has 32 banks, for a total

KMMR16R84C_SamsungSemiconductor.pdf