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M53230400CB0

(M532304x0CB0/CW0) DRAM Module

M53230400CB0 Features

* Part Identification - M53230400CW0-C(4096 cycles/64ms Ref, SOJ, Solder) - M53230400CB0-C(4096 cycles/64ms Ref, SOJ, Gold) - M53230410CW0-C(2048 cycles/32ms Ref, SOJ, Solder) - M53230410CB0-C(2048 cycles/32ms Ref, SOJ, Gold)

* Extended Data Out

* CAS-before-RAS refresh capab

M53230400CB0 General Description

The Samsung M5323040(1)0C is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M5323040(1)0C consists of eight CMOS 4Mx4bits DRAMs in 24-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

M53230400CB0 Datasheet (416.87 KB)

Preview of M53230400CB0 PDF

Datasheet Details

Part number:

M53230400CB0

Manufacturer:

Samsung Semiconductor

File Size:

416.87 KB

Description:

(m532304x0cb0/cw0) dram module.

📁 Related Datasheet

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M53230410CB0 - (M532304x0CB0/CW0) DRAM Module (Samsung Semiconductor)
.. DRAM MODULE M53230400CW0/CB0 & M53230410CW0/CB0 EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION The .

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M53230400CB0 M532304x0CB0 CW0 DRAM Module Samsung Semiconductor

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