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M53230810CB0 - (M532308x0CB0/CW0) DRAM Module

Download the M53230810CB0 datasheet PDF. This datasheet also covers the M53230800CB0 variant, as both devices belong to the same (m532308x0cb0/cw0) dram module family and are provided as variant models within a single manufacturer datasheet.

Description

The Samsung M5323080(1)0C is a 8Mx32bits Dynamic RAM high density memory module.

The Samsung M5323080(1)0C consists of sixteen CMOS 4Mx4bits DRAMs in 24-pin SOJ package mounted on a 72-pin glass-epoxy substrate.

Features

  • Part Identification - M53230800CW0-C(4096 cycles/64ms Ref, SOJ, Solder) - M53230800CB0-C(4096 cycles/64ms Ref, SOJ, Gold) - M53230810CW0-C(2048 cycles/32ms Ref, SOJ, Solder) - M53230810CB0-C(2048 cycles/32ms Ref, SOJ, Gold).
  • Extended Data Out.
  • CAS-before-RAS refresh capability.
  • RAS-only and Hidden refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M53230800CB0_SamsungSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com DRAM MODULE M53230800CW0/CB0 & M53230810CW0/CB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION The Samsung M5323080(1)0C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0C consists of sixteen CMOS 4Mx4bits DRAMs in 24-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The M5323080(1)0C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
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