M53231600BJ0-C, M53231600BE0 Datasheet - Samsung Semiconductor

M53231600BJ0-C (M53231600BE0/BJ0-C) DRAM Module

The Samsung M53231600BE0/BJ0-C is a 16Mx32bits Dynamic RAM high density memory module. The Samsung M53231600BE0/BJ0-C consists of eight CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for eac.

www.DataSheet4U.com DRAM MODULE M53231600BE0/BJ0-C 4Byte 16Mx32 SIMM (16Mx4 base) DataSheet4U.com DataShee Revision 0.1 June 1998 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DRAM MODULE Revision History Version 0.0 (Sept. 1997) M53231600BE0/BJ0-C Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) The 3rd. generation of 64M DRAM components are applied for this module.

M53231600BJ0-C Features

* Part Identification - M53231600BE0-C(4K cycles/64ms Ref, SOJ, Solder) - M53231600BJ0-C(4K cycles/64ms Ref, SOJ, Gold)

* Extended Data Out Mode Operation

* CAS-before-RAS & Hidden Refresh capability

* RAS-only refresh capability

* TTL compatible inputs and ou

M53231600BE0_SamsungSemiconductor.pdf

M53231600BJ0-C Datasheet Preview — This datasheet PDF includes multiple part numbers: M53231600BJ0-C, M53231600BE0. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

M53231600BJ0-C, M53231600BE0

Manufacturer:

Samsung Semiconductor

File Size:

545.95 KB

Description:

(m53231600be0/bj0-c) dram module.

Note:

This datasheet PDF includes multiple part numbers: M53231600BJ0-C, M53231600BE0.
Please refer to the document for exact specifications by model.

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M53231600BJ0-C M53231600BE0 M53231600BE0 BJ0-C DRAM Module Samsung Semiconductor

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