M53233200BJ0-C Description
The Samsung M53233200BE0/BJ0-C is a 32Mx32bits Dynamic RAM high density memory module. The Samsung M53233200BE0/BJ0-C consists of sixteen CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.
M53233200BJ0-C Key Features
- Part Identification
- M53233200BE0-C(4K cycles/64ms Ref, SOJ, Solder)
- M53233200BJ0-C(4K cycles/64ms Ref, SOJ, Gold)
- Extended Data Out Mode Operation
- CAS-before-RAS & Hidden Refresh capability
- RAS-only refresh capability
- TTL patible inputs and outputs
- Single +5V±10% power supply
- JEDEC standard PDpin & pinout
- PCB : Height(1420mil), double sided ponent