S3CI9E0x01 Datasheet - Samsung Semiconductor

S3CI9E0x01 CMOS Microcontroller

is updated. 3. Controller ID register default value is modified. (Page 14) 4. Write Protection NAND Flash commands are changed, and description are updated.(Page 23, 56) Preliminary 0.3 1. Package pin configuration is changed.(page9) 2. Software algorithm of detecting NAND Flash type is added. (p.

S3CI9E0X01 www.DataSheet4U.com FLASH INTERFACE DEVICE S3CI9E0X01 SPECIFICATION Version : Ver. 1.0 Date : Jul. 16. 2003 Samsung Electronics Co., LTD Semiconductor Flash Memory Product Planning & Applications SAMSUNG ELECTRONICS 1 S3CI9E0X01 www.DataSheet4U.com FLASH INTERFACE DEVICE Revision History Revision No. 0.0 Initial Draft History Draft Date Jan. 24 2002 0.1 1.On page 18, BSC is moved from bufferRAM Write Protection command register to system configuration register and bufferRAM W.

S3CI9E0x01 Features

* ! Architecture

* Design Technology : 0.25µm

* Voltage Supply - Main

* Organization - Host Interface : 16-bit 8-bit - NAND Flash Interface : - Little endian addressing

* Internal BufferRAM(4K Bytes) - BootRAM at booting, Cache-like at normal operation

* Integra

S3CI9E0x01_SamsungSemiconductor.pdf