K4F661612E, K4F641612E - (K4F641612E / K4F661612E) 4M x 16bit CMOS Dynamic RAM

Samsung semiconductor

Datasheet Details

Part number	K4F661612E, K4F641612E
Manufacturer	Samsung semiconductor
File Size	445.72 KB
Description	(K4F641612E / K4F661612E) 4M x 16bit CMOS Dynamic RAM
Datasheet	K4F641612E_Samsungsemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: K4F661612E, K4F641612E. Please refer to the document for exact specifications by model.

This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs.

of this family. All of this family have CAS-before-RAS refresh, RAS -only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability. CMOS DRAM.

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Published: Apr 30, 2006 |