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K522H1HACF-B050 Datasheet - Samsung semiconductor

2Gb (128M x16) NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM

K522H1HACF-B050 Features

* Operating Temperature : -25°C ~ 85°C

* Package : 153ball FBGA Type - 8x9x1.0mmt, 0.5mm pitch

* Voltage Supply : 1.7V ~ 1.95V

* Organization - Memory Cell Array : (256M + 8M) x 8bit for 2Gb (512M + 16M) x 8bit for 4Gb DDP - Data Register : (2K +

K522H1HACF-B050 General Description

The K522H1HACF is a Multi Chip Package Memory which combines 2G bit NAND Flash and 1G bit Mobile DDR synchronous Dynamic RAM. NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 250μs on the (2K+64)Byte page and .

K522H1HACF-B050 Datasheet (1.80 MB)

Preview of K522H1HACF-B050 PDF

Datasheet Details

Part number:

K522H1HACF-B050

Manufacturer:

Samsung semiconductor

File Size:

1.80 MB

Description:

2gb (128m x16) nand flash + 1gb (64m x16 ) mobile ddr sdram.
Rev. 1.0, Oct. 2010 K522H1HACF-B050 MCP Specification 2Gb (128M x16) NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RES.

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TAGS

K522H1HACF-B050 2Gb 128M x16 NAND Flash 1Gb 64M x16 Mobile DDR SDRAM Samsung semiconductor

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