K6X0808C1D - 32Kx8 bit Low Power CMOS Static RAM
The K6X0808C1D families are fabricated by SAMSUNG′s advanced CMOS process technology.
The families support verious operating temperature ranges and have various package types for user flexibility of system design.
The families also support low data retention voltage for battery back-up operation wit
K6X0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No.
0.0 1.0 History Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X0808C1D-F 15µA to 10µA - Changed IDR for K6X0808C1D-Q 25µA to 20µA - Errata correction Draft Data October 09, 2002 December 16, 2003 Remark Preliminary Final The attached datasheets are provided by
K6X0808C1D Features
* Process Technology: Full CMOS
* Organization: 32K x 8
* Power Supply Voltage: 4.5~5.5V
* Low Data Retention Voltage: 2V(Min)
* Three state output and TTL Compatible
* Package Type: 28-DIP-600B, 28-SOP-450, 28-TSOP1-0813.4F/R CMOS SRAM GENERAL DESCRI
