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K7N163631B, K7N161831B Datasheet - Samsung semiconductor

K7N163631B - 512Kx36 & 1Mx18 Pipelined NtRAM

The K7N163631B and K7N161831B are 18,874,368-bits Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized.

K7N163631B K7N161831B 512Kx36 & 1Mx18 Pipelined NtRAMTM 18Mb NtRAMTM Specification 100TQFP/165FBGA with Pb/Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS.

K7N163631B Features

* VDD= 2.5 or 3.3V +/- 5% Power Supply.

* Byte Writable Function.

* Enable clock and suspend operation.

* Single READ/WRITE control pin.

* Self-Timed Write Cycle.

* Three Chip Enable for simple depth expansion with no datacontention .

* A inter

K7N161831B_Samsungsemiconductor.pdf