K91G08Q0M Datasheet - Samsung semiconductor

128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

K91G08Q0M Features

* D Endstackable to 2.54 mm (0.1’) spacing D DC isolation test voltage VIO = 5 kV D Low coupling capacitance of typical 0.3 pF D Current Transfer Ratio (CTR) selected into groups Coll. Emitter D Low temperature coefficient of CTR D Wide ambient temperature range D Underwriters Laboratory (UL) 1577

K91G08Q0M General Description

The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for.

K91G08Q0M Datasheet (173.90 KB)

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Part number:

K91G08Q0M

Manufacturer:

Samsung semiconductor

File Size:

173.90 KB

Description:

128m x 8 bit / 64m x 16 bit nand flash memory.

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K91G08Q0M 128M Bit 64M Bit NAND Flash Memory Samsung semiconductor

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K91G08Q0M Features

K91G08Q0M General Description

Datasheet Details

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