K91G08Q0M Datasheet, Memory, Samsung semiconductor

✔ K91G08Q0M Features

D Endstackable to 2.54 mm (0.1’) spacing D DC isolation test voltage VIO = 5 kV D Low coupling capacitance of typical 0.3 pF D Current Transfer Ratio (CTR) selected into

✔ K91G08Q0M Application

Programmable logic controllers, modems, answering machines, general applications 14925 Features D Endstacka

PDF File Details

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Part number:

K91G08Q0M

Manufacturer:

Samsung semiconductor

File Size:

173.90 KB

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📄 Datasheet

Description:

128m x 8 bit / 64m x 16 bit nand flash memory. The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead u

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K91G08Q0M 128M Bit 64M Bit NAND Flash Memory Samsung semiconductor