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K9F5608Q0B-HIB0

32M x 8 Bit / 16M x 16 Bit NAND Flash Memory

K9F5608Q0B-HIB0 Features

* and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG El

K9F5608Q0B-HIB0 General Description

Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0B is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µs on the 528-byte(X.

K9F5608Q0B-HIB0 Datasheet (604.94 KB)

Preview of K9F5608Q0B-HIB0 PDF

Datasheet Details

Part number:

K9F5608Q0B-HIB0

Manufacturer:

Samsung semiconductor

File Size:

604.94 KB

Description:

32m x 8 bit / 16m x 16 bit nand flash memory.
K9F5608U0B-VCB0,VIB0,FCB0,FIB0 K9F5608Q0B-DCB0,DIB0,HCB0,HIB0 K9F5608U0B-YCB0,YIB0,PCB0,PIB0 K9F5608U0B-DCB0,DIB0,HCB0,HIB0 K9F5616Q0B-DCB0,DIB0,HCB0.

📁 Related Datasheet

K9F5608Q0B-HCB0 - 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory (Samsung semiconductor)
K9F5608U0B-VCB0,VIB0,FCB0,FIB0 K9F5608Q0B-DCB0,DIB0,HCB0,HIB0 K9F5608U0B-YCB0,YIB0,PCB0,PIB0 K9F5608U0B-DCB0,DIB0,HCB0,HIB0 K9F5616Q0B-DCB0,DIB0,HCB0.

K9F5608Q0B-DCB0 - 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory (Samsung semiconductor)
K9F5608U0B-VCB0,VIB0,FCB0,FIB0 K9F5608Q0B-DCB0,DIB0,HCB0,HIB0 K9F5608U0B-YCB0,YIB0,PCB0,PIB0 K9F5608U0B-DCB0,DIB0,HCB0,HIB0 K9F5616Q0B-DCB0,DIB0,HCB0.

K9F5608Q0B-DIB0 - 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory (Samsung semiconductor)
K9F5608U0B-VCB0,VIB0,FCB0,FIB0 K9F5608Q0B-DCB0,DIB0,HCB0,HIB0 K9F5608U0B-YCB0,YIB0,PCB0,PIB0 K9F5608U0B-DCB0,DIB0,HCB0,HIB0 K9F5616Q0B-DCB0,DIB0,HCB0.

K9F5608Q0C - NAND Flash Memory (Samsung)
K9F5608Q0C K9F5616Q0C K9F5608D0C K9F5616D0C K9F5608U0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision.

K9F5608Q0C-DCB0 - 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb .

K9F5608Q0C-DIB0 - 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb .

K9F5608Q0C-HCB0 - 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb .

K9F5608Q0C-HIB0 - 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb .

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K9F5608Q0B-HIB0 32M Bit 16M Bit NAND Flash Memory Samsung semiconductor

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