K9F5608U0A-YIB0 Datasheet (Samsung semiconductor)

K9F5608U0A-YIB0, 32M x 8 Bit NAND Flash Memory

- The WE must be held high when outputs are activated.

1.Powerup sequence is added : Recovery time of minimum 1µs is required before internal circuit gets ready for any command sequences ~ 2.5V Preliminary 0.3 Mar.

2th 2001 0.4 Jul.

22th 2001 ≈ ~ 2.5V VCC High WP WE 2.

AC parameter tCLR(C

K9F5608U0A-YCB0,K9F5608U0A-YIB0 Document Title 32M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No.

History 0.0 Initial issue.

Draft Date July 17th 2000 Remark Advanced Information Preliminary 0.1 1.

Support copy-back program - The copy-back program is configured to quickly and efficiently rewrite data stored in one page within the array to another page within the same array without utilizing an external memory.

Since the time-con suming sequently-reading and its re-loa

K9F5608U0A-YIB0 Features

* and specifications including FAQ, please refer to Samsung’s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Ele