K9F5616Q0C Datasheet - Samsung semiconductor

K9F5616Q0C 512Mb/256Mb 1.8V NAND Flash Errata

Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µs on a 528-byt.

K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU > (after) N.C 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 37) 4. Add the specification of Block Lock scheme.(Page 32~3.

K9F5616Q0C Features

* and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specif

K9F5616Q0C Datasheet (684.12 KB)

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Datasheet Details

Part number:

K9F5616Q0C

Manufacturer:

Samsung semiconductor

File Size:

684.12 KB

Description:

512mb/256mb 1.8v nand flash errata.

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K9F5616Q0C-DCB0 1.8V NAND Flash Errata (Samsung)

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K9F5616Q0C 512Mb 256Mb 1.8V NAND Flash Errata Samsung semiconductor

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