K9K1208U0M-YIB0 Datasheet - Samsung semiconductor

K9K1208U0M-YIB0 64M x 8 Bit NAND Flash Memory

- SE is recommended to coupled to GND or Vcc and should not be toggled during reading or programming. 1. Changed don’ t care mode in address cycles - *X can be "High" or "Low" => *L must be set to "Low" 2. Explain how pointer operation works in detail. 3. Renamed GND input (pin # 6) on behal.

K9K1208U0M-YCB0, K9K1208U0M-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH MEMORY History 1. Initial issue - The followings are disprepancy items between K9K5608U0M (256Mb DDP) and K9K1208U0M (512Mb DDP). AC Characteristics Read Cycle Time (tRC) Write Cycle Time (tWC) WE High hold Time (tWH) Data Hold Time (tDH) RE High Hold Time (tREH) K9K5608U0M Min. 50ns Min. 50ns Min. 15ns Min. 10ns Min. 15ns K9K1208U0M Min. 60ns Min. 60ns Min. 25ns Min. 15ns Min. .

K9K1208U0M-YIB0 Features

* and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG E

K9K1208U0M-YIB0_Samsungsemiconductor.pdf