K9K2G08U0M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

Samsung semiconductor

Description

K9K2G08U0M-VCB0,VIB0,FCB0,FIB0 K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0.
Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity.

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Datasheet Specifications

Part number: K9K2G08U0M
Manufacturer: Samsung semiconductor
File Size: 734.52 KB
Datasheet: K9K2G08U0M_Samsungsemiconductor.pdf
Description: 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

Features

* Voltage Supply -1.8V device(K9K2GXXQ0M): 1.70V~1.95V -3.3V device(K9K2GXXU0M): 2.7 V ~3.6 V
* Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9K2G08X0M): (2K + 64)bi

Applications

* such as solid state file storage and other portable applications requiring non-volatility. 3 K9K2G08U0M-VCB0,VIB0,FCB0,FIB0 K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0,PIB0 FLASH MEMORY PIN CONFIGURATION (TSOP1) K9K2GXXX

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📁 Related Datasheet

K9K2G08U0M-VIB0 K9K2G08U0M-YCB0 K9K2G08U0M-YIB0 K9K2G16Q0M K9K2G16Q0M-P K9K2G16Q0M-PCB0

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K9K2G08U0M 256M Bit 128M Bit NAND Flash Memory Samsung semiconductor

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