* Voltage Supply - 3.3V Device : 2.7V ~ 3.6V
* Organization - Memory Cell Array : (2G + 109M) x 8bit - Data Register : (4K + 218) x 8bit
* Automatic Program and Erase - Page Program : (4K + 218)Byte - Block Erase : (512K + 27.25K)Byte
* Page Read Operation - Page Size
K9MDG08U5D Datasheet (1.68 MB)
K9MDG08U5D
Samsung semiconductor
1.68 MB
4g x 8 bit/ 8g x 8 bit/ 16g x 8 bit nand flash memory.
www.DataSheet.co.kr
K9HCG08U1D K9PDG08U5D K9LBG08U0D K9MDG08U5D
Preliminary FLASH MEMORY
K9XXG08UXD
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RE.
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