KBE00S003M-D411
features and specifications including FAQ, please refer to Samsung’s web site. http://samsungelectronics./semiconductors/products/products_index.html The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you.
Revision 1.0 May 2005
MCP MEMORY
Multi-Chip Package MEMORY 1G Bit (128Mx8) Nand Flash- 2 / 256M Bit (8Mx8x4Banks) Mobile SDRAM- 2 FEATURES
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- Operating Temperature : -25°C ~ 85°C
- Package : 107-ball FBGA Type
- 12x14mm, 0.8mm pitch <NAND>
- Power Supply Voltage : 2.5~2.9V
- Organization
- Memory Cell Array : (256M + 8,192K)bits x 8bits
- Data Register : (512 + 16)bits x 8bits
- Automatic Program and Erase
- Page Program : (512 + 16)bits x 8bits
- Block Erase : (16K + 512)Bytes
- Page Read Operation...
