KBY00U00VA-B450 Datasheet, X32) 2/cs, Samsung semiconductor

8gb ddp (512m x16) nand flash + 4gb (64m x32 + 64m x32) 2/cs

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Part number:

KBY00U00VA-B450

Manufacturer:

Samsung semiconductor

File Size:

1.78 MB

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📄 Download the KBY00U00VA-B450 Datasheet PDF

Description:

8gb ddp (512m x16) nand flash + 4gb (64m x32 + 64m x32) 2/cs.
The KBY00U00VA is a Multi Chip Package Memory which combines 8Gbit DDP Nand Flash Memory(organized with two pieces of 4Gbit Nand Flash Memory) and 4Gbit DDR synchronous high data rate Dynamic RAM(orga.

✔ KBY00U00VA-B450 Features

Operating Temperature : -25°C ~ 85°C
Package : 137 FBGA Type - 10.5mmx13mmx1.2mmt, 0.8mm pitch
Voltage Supply - 1.8V Device : 1.7V ~ 1.95V
O

✔ KBY00U00VA-B450 Application

where product failure could result in loss of life or personal or physical harm, or any military or defense

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KBY00U00VA-B450 8Gb DDP 512M x16 NAND Flash 4Gb 64M x32 64M x32 Samsung semiconductor