KBY00U00VA-B450 8Gb DDP (512M x16) NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS

Samsung semiconductor

Description

Rev.1.0, Jul.2010 KBY00U00VA-B450 MCP Specification 8Gb DDP (512M x16) NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datash.
The KBY00U00VA is a Multi Chip Package Memory which combines 8Gbit DDP Nand Flash Memory(organized with two pieces of 4Gbit Nand Flash Memory) and 4Gb.

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Datasheet Specifications

Part number: KBY00U00VA-B450
Manufacturer: Samsung semiconductor
File Size: 1.78 MB
Datasheet: KBY00U00VA-B450_Samsungsemiconductor.pdf
Description: 8Gb DDP (512M x16) NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS

Features

* Operating Temperature : -25°C ~ 85°C
* Package : 137 FBGA Type - 10.5mmx13mmx1.2mmt, 0.8mm pitch
* Voltage Supply - 1.8V Device : 1.7V ~ 1.95V
* Organization - Memory Cell Array : (256M + 8M) x 16bit for 4Gb (512M + 16M) x 16bit for 8Gb DDP - D

Applications

* where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office.

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KBY00U00VA-B450 8Gb DDP 512M x16 NAND Flash 4Gb 64M x32 64M x32 Samsung semiconductor

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