KBY00U00VA-B450 Datasheet (Samsung semiconductor) - 8Gb DDP (512M x16) NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS

KBY00U00VA-B450, 8Gb DDP (512M x16) NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS

The KBY00U00VA is a Multi Chip Package Memory which combines 8Gbit DDP Nand Flash Memory(organized with two pieces of 4Gbit Nand Flash Memory) and 4Gbit DDR synchronous high data rate Dynamic RAM(organized with two pieces of 2Gbit Mobile DDR SDRAM).

NAND cell provides the most cost-effective solutio

Rev.

1.0, Jul.

2010 KBY00U00VA-B450 MCP Specification 8Gb DDP (512M x16) NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

Products and specifications discussed herein are for reference purposes only.

All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.

This document and all information discussed herein remain the

KBY00U00VA-B450 Features

* Operating Temperature : -25°C ~ 85°C

* Package : 137 FBGA Type - 10.5mmx13mmx1.2mmt, 0.8mm pitch

* Voltage Supply - 1.8V Device : 1.7V ~ 1.95V

* Organization - Memory Cell Array : (256M + 8M) x 16bit for 4Gb (512M + 16M) x 16bit for 8Gb DDP - D