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KBY00U00VA-B450 Datasheet - Samsung semiconductor

8Gb DDP (512M x16) NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS

KBY00U00VA-B450 Features

* Operating Temperature : -25°C ~ 85°C

* Package : 137 FBGA Type - 10.5mmx13mmx1.2mmt, 0.8mm pitch

* Voltage Supply - 1.8V Device : 1.7V ~ 1.95V

* Organization - Memory Cell Array : (256M + 8M) x 16bit for 4Gb (512M + 16M) x 16bit for 8Gb DDP - D

KBY00U00VA-B450 General Description

The KBY00U00VA is a Multi Chip Package Memory which combines 8Gbit DDP Nand Flash Memory(organized with two pieces of 4Gbit Nand Flash Memory) and 4Gbit DDR synchronous high data rate Dynamic RAM(organized with two pieces of 2Gbit Mobile DDR SDRAM). NAND cell provides the most cost-effective solutio.

KBY00U00VA-B450 Datasheet (1.78 MB)

Preview of KBY00U00VA-B450 PDF

Datasheet Details

Part number:

KBY00U00VA-B450

Manufacturer:

Samsung semiconductor

File Size:

1.78 MB

Description:

8gb ddp (512m x16) nand flash + 4gb (64m x32 + 64m x32) 2/cs.
Rev. 1.0, Jul. 2010 KBY00U00VA-B450 MCP Specification 8Gb DDP (512M x16) NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datash.

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TAGS

KBY00U00VA-B450 8Gb DDP 512M x16 NAND Flash 4Gb 64M x32 64M x32 Samsung semiconductor

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