KM44S32030B 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL

Samsung semiconductor

Description

KM44S32030B CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the righ.
The KM44S32030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high.

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Datasheet Specifications

Part number: KM44S32030B
Manufacturer: Samsung semiconductor
File Size: 135.09 KB
Datasheet: KM44S32030B_Samsungsemiconductor.pdf
Description: 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 Page ) -. Burst type (Sequential & Interleave)
* All inputs are sampl

Applications

* ORDERING INFORMATION Part No. KM44S32030BT-G/FA KM44S32030BT-G/F8 KM44S32030BT-G/FH KM44S32030BT-G/FL Max Freq. 133MHz(CL=3) 125MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL 54 TSOP(II) Interface Package KM44S32030BT-G/F10 66MHz(CL=2 &3) FUNCTIONAL BLOCK DIAGRAM I/O Control LWE LDQM Data Input Re

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KM44S32030B 128Mbit SDRAM 4Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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