S1P2655A05 Datasheet (Samsung semiconductor) - HIGH CURRENT DARINGTON ARRAYS

S1P2655A05, HIGH CURRENT DARINGTON ARRAYS

LINEAR INTEGRATED CIRCUIT S1P2655A01/02/03/04/05 INTRODUCTION HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS 16 DIP The S1P2655A01, S1P2655A02, S1P2655A03, S1P2655A04 and S1P2655A05 are comprised of saven high voltage, high current NPN darlington transistors arrays with common emitter, open collector outputs.

Suppression diodes are included for inductive load driving and the inputs are pinned opposite the outputs to simplify board layout.

Peak inrush currents to 600mA permit them to driv