S8S3122X16 - 256K x 16 SDRAM

Samsung semiconductor

The S8S3122X16 by Samsung semiconductor is a 256K x 16 SDRAM. Below is the official datasheet preview.

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S8S3122X16 256K x 16 SDRAM by Samsung semiconductor - Datasheet Preview — Official preview page of the **S8S3122X16** 256K x 16 SDRAM datasheet (Samsung semiconductor).

Datasheet Details

Part number	S8S3122X16
Manufacturer	Samsung semiconductor
File Size	1.14 MB
Description	256K x 16 SDRAM
Datasheet	S8S3122X16_Samsungsemiconductor.pdf
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S8S3122X16 Product details

Description

The S8S3122X16 is 4,194,304 bits synchronous high data rate Dynamic RAM organized as 2 x131,072 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle (1K/16ms) CMOS SDRAM.

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Published: May 17, 2005 |