S8S3122X16 Datasheet - Samsung semiconductor

S8S3122X16 256K x 16 SDRAM

The S8S3122X16 is 4,194,304 bits synchronous high data rate Dynamic RAM organized as 2 x131,072 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycl.

S8S3122X16 CMOS SDRAM 256K x 16 SDRAM 128K x 16bit x 2 Banks Synchronous DRAM LVTTL Version 0.0 Sep 2001 Samsung Electronics reserves the right to change products or specification without notice. Ver 0.0 Sep. '01 S8S3122X16 Revision History Version 0.0 (Sep. 2001) CMOS SDRAM Ver 0.0 Sep. '01 S8S3122X16 S Y S .LSI [Custom D R A M ] Á ¦ Ç ° ± ºÅ ë Ç Õ Ä Ú µ åÃ ¼ ° è µ µ N e w C D R A M C o d e I n f o r m a tio n S (1) CMOS SDRAM 8 (2) X (3) X (4) X (5) X (6) X (7) X (8) X (9) X.

S8S3122X16 Features

* 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive

S8S3122X16_Samsungsemiconductor.pdf