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S8S3122X16 256K x 16 SDRAM

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Description

S8S3122X16 CMOS SDRAM 256K x 16 SDRAM 128K x 16bit x 2 Banks Synchronous DRAM LVTTL Version 0.0 Sep 2001 Samsung Electronics reserves the right to.
The S8S3122X16 is 4,194,304 bits synchronous high data rate Dynamic RAM organized as 2 x131,072 words by 16 bits, fabricated with SAMSUNG′s high perfo.

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Features

* 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive

Applications

* ORDERING INFORMATION Part NO. S8S3122X16-TCR2 S8S3122X16-TCR1 MAX Freq. 100MHz(CL2) 100MHz(CL3) Interface Package LVTTL 50 TSOP(II) FUNCTIONAL BLOCK DIAGRAM I/O Control LWE Data Input Register Bank Select Refresh Counter LDQM Output Buffer Ro

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S8S3122X16 256K SDRAM Samsung semiconductor
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