K8Q2815UQB - FLASH MEMORY

Product Overview

Samsung

Datasheet Details

Part number	K8Q2815UQB
Manufacturer	Samsung
File Size	659.48 KB
Description	FLASH MEMORY
Datasheet	K8Q2815UQB Datasheet
Additional preview pages of the K8Q2815UQB datasheet.

Product details

Description

Read While Program/Erase Operation Multiple Bank architectures (8 banks) Bank 0 : 8Mbit (4Kw x 8 and 32Kw x 15) Bank 1 :24Mbit (32Kw x 48) Bank 2 : 24Mbit (32Kw x 48) The K8Q2815UQB featuring single 3.0V power supply, is an 128Mbit NOR-type Flash Memory organized as 8M x16. The memory architecture of the device is designed to divide its memory arrays into 284 blocks with independent hardware pro- Bank 3 : 8Mbit (4Kw x 8 and 32Kw x 15) tection.This block architecture prov

Features

Single Voltage, 2.7V to 3.6V for Read and Write operations.
Endurance : 100,000 Program/Erase Cycles Minimum.
Organization.
Data Retention : 10 years 8M x16 bit (Word mode Only).
Vccq options at 1.8V and 3V I/O.
Fast Read Access Time : 60ns.
Package options.
Page Mode Operation 8 Words Page access allows fast asychronous read Page Read Access Time : 20ns - 56 Pin TSOP (20x14mm) only.

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Published: Oct 31, 2015 |