* Single Voltage, 2.7V to 3.6V for Read and Write operations
* Endurance : 100,000 Program/Erase Cycles Minimum
* Organization
* Data Retention : 10 years 8M x16 bit (Word mode Only)
* Vccq options at 1.8V and 3V I/O
* Fast Read Access Time : 60
K8Q2815UQB Datasheet (659.48 KB)
K8Q2815UQB
Samsung
659.48 KB
Flash memory.
K8Q2815UQB
FLASH MEMORY
128Mb B-die Page NOR Specification Dual Die Package (56TSOP)
(64Mb x 2)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATIO.
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