K8Q2815UQB FLASH MEMORY

Samsung

Description

K8Q2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification Dual Die Package (56TSOP) (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATIO.
Read While Program/Erase Operation. Multiple Bank architectures (8 banks) Bank 0 : 8Mbit (4Kw x 8 and 32Kw x 15) Bank 1 :24Mbit (3.

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Datasheet Specifications

Part number: K8Q2815UQB
Manufacturer: Samsung
File Size: 659.48 KB
Datasheet: K8Q2815UQB-Samsung.pdf
Description: FLASH MEMORY

Features

* Single Voltage, 2.7V to 3.6V for Read and Write operations
* Endurance : 100,000 Program/Erase Cycles Minimum
* Organization
* Data Retention : 10 years 8M x16 bit (Word mode Only)
* Vccq options at 1.8V and 3V I/O
* Fast Read Access Time : 60

Applications

* where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. 1 R

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