K9F5616U0C-PIB0 - 1.8V NAND Flash Errata
(Samsung)
ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City
Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
512Mb/256Mb .
K9F5616U0C-DCB0 - 1.8V NAND Flash Errata
(Samsung)
ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City
Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
512Mb/256Mb .
K9F5616U0C-DIB0 - 1.8V NAND Flash Errata
(Samsung)
ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City
Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
512Mb/256Mb .
K9F5616U0C-HCB0 - 1.8V NAND Flash Errata
(Samsung)
ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City
Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
512Mb/256Mb .
K9F5616U0C-HIB0 - 1.8V NAND Flash Errata
(Samsung)
ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City
Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
512Mb/256Mb .
K9F5616U0C-YCB0 - 1.8V NAND Flash Errata
(Samsung)
ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City
Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
512Mb/256Mb .
K9F5616U0C-YIB0 - 1.8V NAND Flash Errata
(Samsung)
ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City
Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
512Mb/256Mb .
K9F5616U0C - NAND Flash Memory
(Samsung semiconductor)
K9F5608Q0C K9F5616Q0C K9F5608D0C K9F5616D0C K9F5608U0C K9F5616U0C
FLASH MEMORY
Document Title
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
Revision.