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K9WBG08U1M, K9WB-G08U FLASH MEMORY

K9WBG08U1M Description

K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT T.
Offered in 2Gx8bit, the K9KAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit.

K9WBG08U1M Features

* Voltage Supply - 3.3V Device(K9XXG08UXM) : 2.7V ~ 3.6V
* Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit
* Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (256K + 8K)Byte
* Page Read Operation - Pa

K9WBG08U1M Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: K9WBG08U1M, K9WB-G08U. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K9WBG08U1M, K9WB-G08U
Manufacturer
Samsung
File Size
1.80 MB
Datasheet
K9WB-G08U-1M.pdf
Description
FLASH MEMORY
Note
This datasheet PDF includes multiple part numbers: K9WBG08U1M, K9WB-G08U.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

  • K9WAG08U1A - (K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory (Samsung semiconductor)
  • K9WAG08U1M - (K9xxG08UxM) 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory (Samsung semiconductor)

📌 All Tags

FLASH MEMORY Samsung
Samsung K9WBG08U1M-like datasheet