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SW068R08ET

N-channel MOSFET

SW068R08ET Features

* TO-220 TO-263

* High ruggedness

* Low RDS(ON) (Typ 7.1mΩ)@VGS=10V

* Low Gate Charge (Typ 59nC)

* Improved dv/dt Capability

* 100% Avalanche Tested

* Application: Synchronous Rectification, Li Battery Protect Board, Inverter 1 23 1 23 General Description 1. Gate 2. Drai

SW068R08ET General Description

1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 80V.

SW068R08ET Datasheet (853.69 KB)

Preview of SW068R08ET PDF

Datasheet Details

Part number:

SW068R08ET

Manufacturer:

Samwin

File Size:

853.69 KB

Description:

N-channel mosfet.

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TAGS

SW068R08ET N-channel MOSFET Samwin

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