SW068R08ET
Features
TO-220
TO-263
- High ruggedness
- Low RDS(ON) (Typ 7.1mΩ)@VGS=10V
- Low Gate Charge (Typ 59n C)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application: Synchronous Rectification,
Li Battery Protect Board, Inverter
1 23
1 23
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
BVDSS : 80V
: 120A
RDS(ON) : 7.1mΩ
Order Codes
Item
Sales Type
SW P 068R08ET
SW B 068R08ET
Absolute maximum ratings
Marking SW068R08ET SW068R08ET
Symbol
Parameter
VDSS
IDM VGS EAS EAR dv/dt
Drain to source voltage Continuous drain current (@TC=25o C) Continuous drain current (@TC=100o C) Drain current pulsed Gate to source voltage Single pulsed avalanche energy Repetitive avalanche energy Peak diode...
