* Adoption of FBET, MBIT processes.
* Low collector-to-emitter saturation voltage.
* Large current capacity.
* Fast switching speed.
* Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications Absolute Maximum Ratings at
2SB1302
Sanyo Semicon Device
69.08 KB
Pnp transistor.
Ordering number : EN2555B
2SB1302
SANYO Semiconductors
DATA SHEET
2SB1302 PNP Epitaxial Planar Silicon Transistor
High-Current Switching Application.
📁 Related Datasheet
2SB1300 - PNP SILICON TRANSISTOR
(NEC)
.
2SB1301 - PNP SIlicon Transistor
(Renesas)
.
2SB1302 - PNP Epitaxial Planar Silicon Transistors
(Kexin)
SMD Type
Transistors
PNP Epitaxial Planar Silicon Transistors 2SB1302
Features
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation.
2SB1302 - Bipolar Transistor
(ON Semiconductor)
DATA SHEET .onsemi.
Bipolar Transistor
–20 V, –5 A, Low VCE(sat), PNP Single PCP
2SB1302
Features
• Adoption of FBET, MBIT Processes • Large C.
2SB1308 - Power Transistor
(Rohm)
Transistors
2SB1308 2SD1963
(94S-166-B204)
(94S-342-D204)
290
Appendix
Notes
No technical content pages of this document may be reproduced in an.
2SB1308 - Power Transistor
(GME)
Power Transistor(-50V,-3A)
FEATURES
Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A
Pb
Lead-free
Excellent DC curren.
2SB1308 - PNP Transistor
(WILLAS)
WILLAS
SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE
FM120-M+ 2SB1308 THRU
FM1200.
2SB1308 - Plastic-Encapsulated Transistors
(TRANSYS)
Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated Transistors
2SB1308
FEATURES Power dissipation PCM: Collector current ICM: Collector-b.
