* High speed (tf=100ns typ).
* High breakdown voltage (VCBO=1500V).
* High reliability (Adoption of HVP process).
* Adoption of MBIT process.
* On-chip damper diode. Package Dimensions unit:mm 2039D [2SC4123] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications Absolu
2SC4123
Sanyo Semicon Device
92.32 KB
Npn transistor.
Ordering number:EN2956
NPN Triple Diffused Planar Silicon Transistor
2SC4123
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicatio.
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