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2SC4123 - NPN Transistor

Sanyo Semicon Device

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Datasheet Details

Part number	2SC4123
Manufacturer	Sanyo Semicon Device
File Size	92.32 KB
Description	NPN Transistor
Datasheet	2SC4123_SanyoSemiconDevice.pdf

2SC4123 Product details

Features

High speed (tf=100ns typ).
High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode. Package Dimensions unit:mm 2039D [2SC4123] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO.

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Published: Mar 22, 2005 |