* High current capacity.
* Adoption of MBIT process.
* High DC current gain.
* Low collector-to-emitter saturation voltage.
* High VEBO. Package Dimensions unit:mm 2045B [2SC5155] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 unit:mm 2044B 0.85 0.7 0.6 123 2.3 2.3 0.8 1.6 7.5 1.2 1 : Base
2SC5155
Sanyo Semicon Device
115.11 KB
Npn transistor.
Ordering number:EN4802
NPN Epitaxial Planar Silicon Transistor
2SC5155
Low-Frequency General-Purpose Amplifier, Applications
Applications
* Vari.
📁 Related Datasheet
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