2SC5994
Features
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Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (450mm2!0.8m) Tc=25°C Conditions Ratings 100 100 50 6 2 4 400 1.3 3.5 150 --55 to +150 Unit V V V V A A m A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO h FE1 h FE2 VCB=50V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100m A VCE=2V, IC=1.5A 200 40 Conditions Ratings min typ max 1 1 560 Unit µA µA
Marking : FJ
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