2SC5999
Features
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- Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Surface mount type.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings 120 120 50 6 25 40 2 1.65 40 150 --55 to +150 Unit V V V V A A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO h FE1 h FE2 VCB=100V, IE=0 VEB=4V, IC=0 VCE=2V, IC=1A VCE=2V, IC=15A 200 150 Conditions Ratings min typ max 10 10 560 Unit µA µA
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Any and all SANYO products described or contained herein do not have specifications that can handle applications...
