2SD1876 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SD1876
Manufacturer	Sanyo Semicon Device
File Size	110.80 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SD1876_SanyoSemiconDevice.pdf

High speed (tf=100ns).
High breakdown voltage (VCBO=1500V).
High reliability (adoption of HVP process).
On-chip damper diode. 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC.

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Published: Apr 3, 2005 |