2SK2349
Features
- Low ON resistance, ultrahigh-speed switching.
- High reliability (Adoption of HVP process).
Package Dimensions unit: mm 2131-TO-3JML
[2SK2349]
Specifications Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions
1 : Gate 2 : Drain 3 : Source SANYO: TO-3JML
PW≤10µs, duty cycle≤1% Tc=25°C
Ratings 1500 ±30 10 20 4.6 160 150
- 55 to +150
Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter D-S Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to Source Leak Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss Conditions ID=1m A, VGS=0 VDS=1500V, VGS=0 VGS=±30V, VDS=0 VDS=10V, ID=1m A VDS=20V,...
