Datasheet4U Logo Datasheet4U.com

2SK445 - N-Channel MOSFET

Key Features

  • Largeyfs.
  • Small Ciss.
  • Ultralow noise figure.
  • High frequency, low-frequency, low noise amplifier. Package Dimensions unit:mm 2005C [2SK445] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature VDSS VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta =.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK440 N-Channel MOSFET Transistor Inchange Semiconductor
2SK442 N-Channel Silicon Transistor Toshiba
2SK447 N-Channel MOSFET Transistor Inchange Semiconductor
2SK447 N-Channel Transistor Toshiba
2SK400 N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SK443 N-Channel MOSFET
2SK444 N-Channel MOSFET
2SK404 N-Channel MOSFET
2SK4043LS N-Channel Silicon MOSFET
2SK4044 N-Channel Silicon MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:EN1439B N-Channel Junction Silicon FET 2SK445 Video Camera 1st Stage Applications Features · Largeyfs. · Small Ciss. · Ultralow noise figure. · High frequency, low-frequency, low noise amplifier. Package Dimensions unit:mm 2005C [2SK445] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature VDSS VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta = 25˚C 1.