3LP01N - P-Channel Silicon MOSFET

Sanyo Semicon Device

Datasheet Details

Package Dimensions unit : mm 2178 5.0 4.0 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. [3LP01N] 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 1 : Source 2 : Drain 3 : Gate 1.3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty.

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Published: Oct 1, 2007 |