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5HN02M N-channel MOS type silicon field effect transistor

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Description

5HN02M No.5HN02M µ µ µ µ   Ω Ω 0.425 10V 0V VIN VIN VDD=25V ID=100mA RL=250Ω 0.15 3 2.1 1.250 0 0.1 PW=10µs D.C.1% D G VOUT 0.425 5H.

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Datasheet Specifications

Part number
5HN02M
Manufacturer
Sanyo Semicon Device
File Size
390.96 KB
Datasheet
5HN02M_SanyoSemiconDevice.pdf
Description
N-channel MOS type silicon field effect transistor

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