5HN02M
Sanyo Semicon Device
390.96 KB
N-channel mos type silicon field effect transistor.
5HN02M No. 5HN02M µ µ µ µ Ω Ω 0.425 10V 0V VIN VIN VDD=25V ID=100mA RL=250Ω 0.15 3 2.1 1.250 0 0.1 PW=10µs D.C. 1% D G VOUT 0.425 5H.
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