* 1.0 Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 4.5 0.6 1.0 0.9 0.5 1 2 3 0.45 1 : Emitter 2 : Collector 3 : Base Specifications Absolute Maximum Ratings at Ta=25°C Paramet
A2112
Sanyo Semicon Device
64.41 KB
2sa2112.
Ordering number : ENN7379 2SA2112 PNP Epitaxial Planar Silicon Transistors 2SA2112 High Current Switching Applications Applications Packa.
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